• DocumentCode
    57685
  • Title

    Modeling the Effects of Na Incorporation on CIGS Solar Cells

  • Author

    Mungan, Elif Selin ; Xufeng Wang ; Alam, Md. Ashraful

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    3
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    451
  • Lastpage
    456
  • Abstract
    In this paper, we quantitatively evaluate the relative importance of three mechanisms that are proffered by various groups to interpret the effects of sodium (Na) incorporation in copper indium gallium diselenide solar cells. The suggested mechanisms are 1) increase in the carrier density due to defect passivation; 2) spatial redistribution of gallium (Ga); and 3) change in the crystal orientation. The simulation framework which is developed for this purpose indicates that, among these three coexisting effects, the increase in the carrier density with Na incorporation is likely to be most important. If the grain boundaries (GBs) initially contain donor-like traps that are subsequently passivated by Na, the increase in carrier density can improve the cell efficiency significantly. On the other hand, we find that the effects of Ga redistribution and change in crystal orientation are limited.
  • Keywords
    carrier density; copper compounds; crystal orientation; gallium compounds; grain boundaries; indium compounds; solar cells; ternary semiconductors; CIGS solar cells; Cu(InGa)Se2; Na incorporation; carrier density; copper indium gallium diselenide; crystal orientation; defect passivation; donor-like traps; grain boundaries; spatial redistribution; Charge carrier density; Doping; Electron traps; Materials; Photonic band gap; Photovoltaic cells; Spontaneous emission; Grain boundaries (GBs); photovoltaic (PV) cells; semiconductor device modeling; thin-film devices;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2012.2221082
  • Filename
    6332457