Title :
A gate driver with output voltage equal to triple input voltage
Author :
Hwu, K.I. ; Yau, Y.T.
Author_Institution :
Dept. of Electr. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
Abstract :
This paper presents a gate driver, which has the output voltage with triple input voltage under only one positive-voltage source fed. Such a gate driver can reduce the number of voltage sources, and hence the size of the overall system is compact. From the point of view of power loss, this gate driver can reduce the transient period of the gate of the n-channel MOSFET power switch and hence decreases the switching loss, whereas such a gate driver can reduce the turn-on resistance of the n-channel MOSFET power switch and hence decreases the conduction loss. The detailed operating principles are illustrated and some simulated and experimental results are provided to verify the effectiveness of the proposed topology.
Keywords :
driver circuits; power MOSFET; power semiconductor switches; gate driver; n-channel MOSFET power switch; output voltage; positive-voltage source; power loss; switching loss; triple input voltage; Decision support systems; Gate driver; n-channel MOSFET; power switch;
Conference_Titel :
Sustainable Energy Technologies (ICSET), 2012 IEEE Third International Conference on
Conference_Location :
Kathmandu
Print_ISBN :
978-1-4577-1870-0
Electronic_ISBN :
2165-4387
DOI :
10.1109/ICSET.2012.6357425