Title :
Features of physical and chemical properties of inorganic salts, grown in the electric field
Author :
Rodzevich, A.P. ; Gazenaur, E.G. ; Walnukova, A.S. ; Kuzmina, L.V.
Author_Institution :
Department of metallurgy of black metals, Yurginskiy Technological Institute of the Tomsk Polytechnic University, Russia
Abstract :
The present work continues a cycle of the works, devoted to research of influence of low electric fields on physical and chemical properties of the crystal structures grown in them. Objects of research is monocrystal of azide (chloride, bromide) of silver (alkaline of metals), grown in the noncontact constant electric field (intensity of electric field varied in a range from 10-4 to 100 V/m). Is established the influence of the low electric field on the size, the degree of optical purity and conductivity of crystals grown in field. Crystallization of inorganic salts in the electric field allows gaining chemically the pure of crystal with minimal containing of defects. The crystals grown in the electric field are characterized by weak reactionary ability what shown by the results of studies of photochemical decomposition of thermal decomposition and of electro-field decomposition of sample. The use of the patented method of growing crystal in low electric fields allows to obtain crystals of the specified sizes and reactionary ability with minimum variance, with a minimum content of defects.
Keywords :
crystal defects; crystal structure; crystallisation; optical conductivity; photodissociation; pyrolysis; silver compounds; AgBr; AgCl; azide; bromide; chemical properties; chloride; crystal structure; crystallization; defects; electric field; electro-field decomposition; inorganic salts; monocrystal; optical conductivity; optical purity; photochemical decomposition; physical properties; thermal decomposition; Conductivity; Crystallization; Electric fields; Silver; defective structure; dispersible and morphological descriptions; electric fields; monocrystal of inorganic salts; reactionary ability;
Conference_Titel :
Strategic Technology (IFOST), 2012 7th International Forum on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4673-1772-6
DOI :
10.1109/IFOST.2012.6357555