Title :
Model of plasma chemical etching of Si in CCl2F2/O2 plasma
Author :
Bogomolov, Boris K.
Author_Institution :
Novosibirsk State Technical University, Novosibirsk, Russia
Abstract :
The basic results of plasma etching of silicon in CCl2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polimer.
Keywords :
elemental semiconductors; silicon; sputter etching; Si; active delivery chemically active particle conditions; etching teflon polymer; quartz reactor; silicon plasma chemical etching model; Anodes; Chemicals; Etching; Inductors; Plasmas; Silicon; nanotechnology; plasma etching; silicon;
Conference_Titel :
Strategic Technology (IFOST), 2012 7th International Forum on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4673-1772-6
DOI :
10.1109/IFOST.2012.6357579
