DocumentCode
577515
Title
Matrix X-ray detector
Author
Prokopyev, D.G. ; Tatarnikov, D.A. ; Lagunova, Z.V.
Author_Institution
National Research Tomsk Polytechnic University, Tomsk, Russia
fYear
2012
fDate
18-21 Sept. 2012
Firstpage
1
Lastpage
3
Abstract
The article describes the development of the new design of the X-ray detector with direct conversion. A storage capacitor and a key-based field-effect transistor are created in each of the pixel detectors. The control of the key is carried out by applying the pulses to the gates of the transistors combined in the matrix columns the charge of the key pixels is removed from the rows of the matrix, respectively.
Keywords
III-V semiconductors; X-ray detection; capacitor storage; diagnostic radiography; field effect transistors; gallium arsenide; mammography; GaAs; direct conversion; key based field effect transistor; matrix X-ray detector; pixel detector; storage capacitor; Capacitors; Detectors; Gallium arsenide; Integrated circuits; Silicon; Transistors; X-ray imaging; X-ray detector; detector; matrix detector;
fLanguage
English
Publisher
ieee
Conference_Titel
Strategic Technology (IFOST), 2012 7th International Forum on
Conference_Location
Tomsk
Print_ISBN
978-1-4673-1772-6
Type
conf
DOI
10.1109/IFOST.2012.6357750
Filename
6357750
Link To Document