Title :
Matrix X-ray detector
Author :
Prokopyev, D.G. ; Tatarnikov, D.A. ; Lagunova, Z.V.
Author_Institution :
National Research Tomsk Polytechnic University, Tomsk, Russia
Abstract :
The article describes the development of the new design of the X-ray detector with direct conversion. A storage capacitor and a key-based field-effect transistor are created in each of the pixel detectors. The control of the key is carried out by applying the pulses to the gates of the transistors combined in the matrix columns the charge of the key pixels is removed from the rows of the matrix, respectively.
Keywords :
III-V semiconductors; X-ray detection; capacitor storage; diagnostic radiography; field effect transistors; gallium arsenide; mammography; GaAs; direct conversion; key based field effect transistor; matrix X-ray detector; pixel detector; storage capacitor; Capacitors; Detectors; Gallium arsenide; Integrated circuits; Silicon; Transistors; X-ray imaging; X-ray detector; detector; matrix detector;
Conference_Titel :
Strategic Technology (IFOST), 2012 7th International Forum on
Conference_Location :
Tomsk
Print_ISBN :
978-1-4673-1772-6
DOI :
10.1109/IFOST.2012.6357750
