• DocumentCode
    577536
  • Title

    High-frequency short-pulsed metal plasma-immersion ion implantation using filtered DC vacuum-arc plasma (part one)

  • Author

    Ryabchikov, A.I. ; Stepanov, I.B. ; Sivin, D.O. ; Dektyarev, S.V. ; Dodorin, K.Yu.

  • Author_Institution
    National research Tomsk Polytechnic University, Tomsk Russia
  • fYear
    2012
  • fDate
    18-21 Sept. 2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10 ÷ 99% are considered. The regularities of ion implantation and metal plasma deposition for metal samples are theoretically and experimentally investigated. Experimentally has been shown that metal plasma based ion implantation as well as high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition as well as ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, pulse repetition rate smoothly adjusted in the range (2 ÷ 4.4)×105 p.p.s. and pulse duration ranging from 0,5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor has been examined.
  • Keywords
    ion beam assisted deposition; plasma deposition; plasma immersion ion implantation; plasma sources; vacuum arcs; bias potential variation; duty factor; filtered DC metal plasma source; filtered DC vacuum-arc plasma; high-concentration metal plasma ion implantation; high-frequency short-pulsed metal plasma-immersion ion implantation; high-frequency short-pulsed negative bias voltage; ion implantation method; ion surface sputtering compensation; ion-assisted coating deposition; material treatment method; metal plasma based ion implantation; metal plasma deposition; plasma concentration; pulse duration; pulse repetition rate; time 0.5 mus to 2 mus; voltage 0 V to 4 kV; Coatings; Electric potential; Electrodes; Ion implantation; Metals; Plasmas; Surface treatment; implantation; plasma filter; plasma-immersion ion; vacuum-arc plasma;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Strategic Technology (IFOST), 2012 7th International Forum on
  • Conference_Location
    Tomsk
  • Print_ISBN
    978-1-4673-1772-6
  • Type

    conf

  • DOI
    10.1109/IFOST.2012.6357800
  • Filename
    6357800