DocumentCode
577873
Title
A new approach to Ge lasers with low pump power
Author
Chen, Xiaochi ; Huo, Yijie ; Fei, Edward T. ; Shambat, Gary ; Zang, Kai ; Liu, Xi ; Chen, Yusi ; Kamins, Theodore I. ; Vuckovic, Jelena ; Harris, James S.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
60
Lastpage
61
Abstract
We present direct bandgap photoluminescence from carrier confinement in Ge/SiGe quantum wells in a microdisk resonator. Based on simulation and experimental results, the Ge/SiGe quantum well structure has great potential to serve as a low pump power Ge laser.
Keywords
Ge-Si alloys; optical pumping; photoluminescence; quantum well lasers; Ge-SiGe; carrier confinement; direct bandgap photoluminescence; microdisk resonator; pump power; quantum well structure; Carrier confinement; Optical pumping; Optical resonators; Photoluminescence; Pump lasers; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358488
Filename
6358488
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