DocumentCode :
577874
Title :
Low-power monolithic COMB laser for short-reach WDM optical interconnects
Author :
Gubenko, A. ; Mikhrin, S. ; Mikhrin, V. ; Krestnikov, I. ; Livshits, D.
Author_Institution :
Innolume GmbH, Dortmund, Germany
fYear :
2012
fDate :
23-27 Sept. 2012
Firstpage :
62
Lastpage :
63
Abstract :
16+ low-noise optical comb lines with 80 GHz spacing and 0 dBm/line output power are generated by a single InAs/GaAs quantum dot (QD) Fabry-Perot laser. Electrical power consumption is reduced dramatically down to 6 mW/line.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser noise; optical communication equipment; optical interconnections; power consumption; quantum dot lasers; wavelength division multiplexing; InAs-GaAs; electrical power consumption; frequency 80 GHz; laser output power; low-noise optical comb lines; low-power monolithic COMB laser; short-reach WDM optical interconnects; single quantum dot Fabry-Perot laser; Gallium arsenide; Laser modes; Optical interconnections; Power demand; Pump lasers; Quantum dot lasers; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
Type :
conf
DOI :
10.1109/IPCon.2012.6358489
Filename :
6358489
Link To Document :
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