DocumentCode :
577884
Title :
InGaAs/InP Single-Photon Avalanche Diode with narrow photon timing response
Author :
Acerbi, Fabio ; Tosi, Alberto ; Shehata, Andrea Bahgat ; Anti, Michele ; Zappa, Franco
Author_Institution :
Dipt. di Elettron. e Inf., Politec. di Milano, Vinci, Italy
fYear :
2012
fDate :
23-27 Sept. 2012
Firstpage :
94
Lastpage :
95
Abstract :
We present the performances of new InGaAs/InP Single-Photon Avalanche Diodes (SPADs) for photon counting and timing operation up to about 1700 nm. They have been designed to achieve good detection efficiency, low afterpulsing and very good timing performances. When they are operated at 200 K, with 5 V of excess bias, they show a detection efficiency of more than 25% and a dark count rate of about 6 kcps. The timing performances (particularly the “sharpness” of the timing response) reaches the new state-of-the-art: full-width at half maximum of about 90 ps and a full-width at 1/1000 of maximum of less than 460 ps, thus allowing to acquire optical waveforms with very wide dynamic ranges in TCSPC measurements.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical design techniques; photodetectors; photon counting; InGaAs-InP; SPAD; TCSPC measurements; afterpulsing; dark count rate; detection efficiency; full-width at half maximum; narrow photon timing response; optical waveforms; single-photon avalanche diode; temperature 200 K; time-correlated single photon counting; timing performance; voltage 5 V; Detectors; Indium gallium arsenide; Indium phosphide; Logic gates; Photonics; Timing; Timing jitter; TCSPC; detection efficiency; near infrared; photon counting; photon timing; single photon avalanche diode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
Type :
conf
DOI :
10.1109/IPCon.2012.6358505
Filename :
6358505
Link To Document :
بازگشت