DocumentCode
577885
Title
Extended wavelength InGaAs-Based avalanche photodiodes for single photon counting applications
Author
Onat, Bora M. ; Slomkowski, Krys ; Itzler, Mark
Author_Institution
Princeton Lightwave, Inc., Cranbury, NJ, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
96
Lastpage
97
Abstract
We present our design and characterization on SPADs and NFADs with InGaAs/GaAsSb Type II SL absorber regions on InP substrates with extended wavelength detection up to 2.4μm wavelengths for single photon counting applications. Packaged devices showed very low variation at -40°C, with ~100nA dark current at 2 volts below breakdown voltage. The measured DCR was 106 Hz at 2 volts excess bias at 223K.
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; infrared detectors; photon counting; superlattices; InGaAs-GaAsSb-InP; avalanche photodiodes; dark current; extended wavelength detection; negative feedback avalanche diode; single photon counting applications; temperature -40 C; temperature 223 K; type II superlattice absorber regions; wavelength 2.4 mum; Absorption; Indium gallium arsenide; Indium phosphide; Lattices; Photonics; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358506
Filename
6358506
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