Title :
Extended wavelength InGaAs-Based avalanche photodiodes for single photon counting applications
Author :
Onat, Bora M. ; Slomkowski, Krys ; Itzler, Mark
Author_Institution :
Princeton Lightwave, Inc., Cranbury, NJ, USA
Abstract :
We present our design and characterization on SPADs and NFADs with InGaAs/GaAsSb Type II SL absorber regions on InP substrates with extended wavelength detection up to 2.4μm wavelengths for single photon counting applications. Packaged devices showed very low variation at -40°C, with ~100nA dark current at 2 volts below breakdown voltage. The measured DCR was 106 Hz at 2 volts excess bias at 223K.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; infrared detectors; photon counting; superlattices; InGaAs-GaAsSb-InP; avalanche photodiodes; dark current; extended wavelength detection; negative feedback avalanche diode; single photon counting applications; temperature -40 C; temperature 223 K; type II superlattice absorber regions; wavelength 2.4 mum; Absorption; Indium gallium arsenide; Indium phosphide; Lattices; Photonics; Substrates; Temperature measurement;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358506
