DocumentCode :
577898
Title :
Developments in high performance photodiodes
Author :
Joshi, Abhay
Author_Institution :
Discovery Semicond., Ewing, NJ, USA
fYear :
2012
fDate :
23-27 Sept. 2012
Firstpage :
1
Lastpage :
2
Abstract :
As the current handling - bandwidth product of a single photodiode comprised of lattice matched In0.53Ga0.47As/InP material reaches a practical limit, we explore new lattice mismatched material system of In0.72Ga0.28As/InAsP/InP as a path-forward technology to increase this key parameter.
Keywords :
arsenic compounds; gallium compounds; indium compounds; optical lattices; photodiodes; In0.72Ga0.28As-InAsP-InP; current handling; high performance photodiodes; lattice mismatched material system; path-forward technology; Indium phosphide; Lattices; Optical fiber communication; Optical noise; Optical sensors; Photodiodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
Type :
conf
DOI :
10.1109/IPCon.2012.6358536
Filename :
6358536
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=577898
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