Title :
Phase of intermodulation distortion products in high-linearity photodiode: Measurement technique and theoretical model
Author :
Yang Fu ; Huapu Pan ; Beling, Andreas ; Campbell, Joe
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
The third-order intermodulation distortion products (IMD3) of the high-linearity InGaAs/InP photodiode exhibit 180 degree phase changes around their minima, which can be explained by a nonlinear responsivity model.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; intermodulation distortion; optical distortion; phase measurement; photodiodes; wide band gap semiconductors; 180-degree phase changes; IMD3; InGaAs-InP; high-linearity photodiode; nonlinear responsivity model; phase measurement; third-order intermodulation distortion products; Distortion measurement; Frequency measurement; Intermodulation distortion; Phase measurement; Photoconductivity; Photodiodes; device modeling; intermodulation distortion; phase measurement; photodiode;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358537
