• DocumentCode
    577902
  • Title

    Planar InAs photodiodes fabricated using He ion implantation

  • Author

    Sandall, Ian ; Tan, Chee Hing ; Smith, Andrew ; Gwilliam, Russell

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    165
  • Lastpage
    166
  • Abstract
    This work has shown that it is possible to use He implantation with InAs to produce highly resistive areas and that when combined with post implantation annealing, a sufficiently high resistive region can be formed to allow the fabrication of a planar photodiode.
  • Keywords
    helium; indium compounds; ion implantation; photodiodes; He; InAs; ion implantation; photodiodes; resistive region; Annealing; Conductivity; Helium; Ion implantation; P-i-n diodes; Photodiodes; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358542
  • Filename
    6358542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=577902