• DocumentCode
    577937
  • Title

    Mushroom-mesa GaAs/In0.5Ga0.5P based laser power converter for simultaneous 10 Gbit/sec data detection and DC electrical power generation

  • Author

    Shi, Jin-Wei ; Wun, Jhih-Min ; Tsai, Cheng-Yo ; Bowers, J.E.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    310
  • Lastpage
    311
  • Abstract
    We demonstrate a novel high-speed GaAs/In0.5Ga0.5P based laser power converter with under-cut mesa to minimize junction capacitance. Under near turn-on voltage (+0.8 V), high-speed (10Gbit/sec) data detection with ~20% power generation efficiency can be achieved.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical interconnections; DC electrical power generation; bit rate 10 Gbit/s; high-speed based laser power converter; high-speed data detection; minimize junction capacitance; mushroom-mesa; power generation efficiency; turn-on voltage; under-cut mesa; Gallium arsenide; Optical interconnections; Performance evaluation; Photoconductivity; Power generation; Semiconductor device measurement; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358616
  • Filename
    6358616