DocumentCode :
577937
Title :
Mushroom-mesa GaAs/In0.5Ga0.5P based laser power converter for simultaneous 10 Gbit/sec data detection and DC electrical power generation
Author :
Shi, Jin-Wei ; Wun, Jhih-Min ; Tsai, Cheng-Yo ; Bowers, J.E.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fYear :
2012
fDate :
23-27 Sept. 2012
Firstpage :
310
Lastpage :
311
Abstract :
We demonstrate a novel high-speed GaAs/In0.5Ga0.5P based laser power converter with under-cut mesa to minimize junction capacitance. Under near turn-on voltage (+0.8 V), high-speed (10Gbit/sec) data detection with ~20% power generation efficiency can be achieved.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical interconnections; DC electrical power generation; bit rate 10 Gbit/s; high-speed based laser power converter; high-speed data detection; minimize junction capacitance; mushroom-mesa; power generation efficiency; turn-on voltage; under-cut mesa; Gallium arsenide; Optical interconnections; Performance evaluation; Photoconductivity; Power generation; Semiconductor device measurement; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
Type :
conf
DOI :
10.1109/IPCon.2012.6358616
Filename :
6358616
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=577937
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