• DocumentCode
    577939
  • Title

    Integrated 180 nm CMOS phototransistors with an optimized responsivity-bandwidth-product

  • Author

    Kostov, Plamen ; Gaberl, Wolfgang ; Hofbauer, Michael ; Zimmermann, Horst

  • Author_Institution
    Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    314
  • Lastpage
    315
  • Abstract
    A phototransistor with an optimized responsivity-band-width-product is presented in this paper. The device has a size of 40×40 μm2 and is implemented in a standard 180 nm CMOS process. By means of a thick low doped p-epitaxial layer starting material (collector), a base formed as striped n-wells and an optimized design of the emitter high responsivity-bandwidth-product values up to 171.1 A/W*MHz are achieved.
  • Keywords
    CMOS integrated circuits; integrated optoelectronics; optimisation; phototransistors; integrated CMOS phototransistors; optimized design; optimized responsivity-bandwidth-product; size 180 nm; striped n-wells; thick low doped p-epitaxial layer starting material; Bandwidth; CMOS integrated circuits; CMOS process; Phototransistors; Silicon; Standards; CMOS; Light Detector; Phototransistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358618
  • Filename
    6358618
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=577939