Title :
Tunable visible response of ZnO thin-film phototransistors with atomic layer deposition technique
Author :
Aygün, Levent E. ; Bozkurt-Oruc, Feyza ; Okyay, Ali K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
Abstract :
We fabricated TFPT with 14-nm-thick n-ZnO channel at 80°C by ALD technique. The drain to source photocurrent due to UV photons can be tuned by changing gate voltage. We also observed that the absorption of sub-bandgap photons could be prevented by operating at positive gate bias. This property could be used for light modulators for visible regime. Moreover, this could be applied to the smart glass technology for electrical voltage controlled transparency. Furthermore, solar-blind UV detectors could also be designed with this technology.
Keywords :
II-VI semiconductors; atomic layer deposition; optical fabrication; optical tuning; photoconductivity; photodetectors; phototransistors; thin film transistors; ultraviolet detectors; visible spectra; wide band gap semiconductors; zinc compounds; ALD technique; TFPT; UV photons; ZnO; atomic layer deposition technique; drain-to-source photocurrent; electrical voltage controlled transparency; gate voltage; light modulators; positive gate bias; size 14 nm; smart glass technology; solar-blind UV detectors; subbandgap photons; temperature 80 degC; thin-film phototransistors; tunable visible response; Logic gates; Photoconductivity; Photonics; Phototransistors; Semiconductor device measurement; Thin film transistors; Zinc oxide;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358653
