Tunable visible response of ZnO thin-film phototransistors with atomic layer deposition technique

Author

Aygün, Levent E. ; Bozkurt-Oruc, Feyza ; Okyay, Ali K.

Author_Institution

Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey

fYear

2012

fDate

23-27 Sept. 2012

Firstpage

384

Lastpage

385

Abstract

We fabricated TFPT with 14-nm-thick n-ZnO channel at 80°C by ALD technique. The drain to source photocurrent due to UV photons can be tuned by changing gate voltage. We also observed that the absorption of sub-bandgap photons could be prevented by operating at positive gate bias. This property could be used for light modulators for visible regime. Moreover, this could be applied to the smart glass technology for electrical voltage controlled transparency. Furthermore, solar-blind UV detectors could also be designed with this technology.

Keywords

II-VI semiconductors; atomic layer deposition; optical fabrication; optical tuning; photoconductivity; photodetectors; phototransistors; thin film transistors; ultraviolet detectors; visible spectra; wide band gap semiconductors; zinc compounds; ALD technique; TFPT; UV photons; ZnO; atomic layer deposition technique; drain-to-source photocurrent; electrical voltage controlled transparency; gate voltage; light modulators; positive gate bias; size 14 nm; smart glass technology; solar-blind UV detectors; subbandgap photons; temperature 80 degC; thin-film phototransistors; tunable visible response; Logic gates; Photoconductivity; Photonics; Phototransistors; Semiconductor device measurement; Thin film transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Conference (IPC), 2012 IEEE

Conference_Location

Burlingame, CA

Print_ISBN

978-1-4577-0731-5

Type

conf

DOI

10.1109/IPCon.2012.6358653

Filename

6358653