Title :
Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers
Author :
Liu, Guangyu ; Zhang, Jing ; Tan, Chee-Keong ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
The characteristics of InGaN quantum wells light-emitting diodes with thin large bandgap AlGaInN barriers were analyzed with taking into account the carrier transport effect, which resulted in efficiency-droop suppression.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical materials; semiconductor quantum wells; wide band gap semiconductors; InGaN-AlGaInN; carrier transport effect; efficiency-droop suppression; light emitting diodes; quantum wells; thin large-bandgap barrier layers; Gallium nitride; IEEE Lasers and Electro-Optics Society; USA Councils;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358677
