• DocumentCode
    578008
  • Title

    Bismide alloys for photonic devices: Potential and progress

  • Author

    Sweeney, Stephen J.

  • Author_Institution
    Dept. of Phys., Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    602
  • Lastpage
    603
  • Abstract
    This paper discusses how the addition of Bismuth to III-V alloys gives rise to improved band structure potentially offering reduced non-radiative losses and improved temperature stability for devices in the near- and mid-infrared.
  • Keywords
    III-V semiconductors; laser stability; optical losses; photonic band gap; semiconductor lasers; III-V alloys; band structure; bismide alloys; nonradiative losses; photonic devices; temperature stability; Bismuth; Gallium arsenide; Indium phosphide; Photonic band gap; Strain; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358765
  • Filename
    6358765
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=578008