DocumentCode
578009
Title
Gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates
Author
Zhang, Jing ; Tansu, Nelson
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
604
Lastpage
605
Abstract
Optical gain properties of InGaN quantum wells on ternary substrates are analyzed for visible lasers. Larger optical gains are obtained by employing ternary substrates, which indicate its potential for green-emitting diode lasers.
Keywords
III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; InGaN; green-emitting diode lasers; laser characteristics; optical gain properties; quantum wells; ternary InGaN substrates; visible lasers; Charge carrier density; Gallium nitride; Optical polarization; Piezoelectric polarization; Semiconductor lasers; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358766
Filename
6358766
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