DocumentCode :
578050
Title :
Nanopores and quantum dots by selective area metalorganic chemical vapor deposition
Author :
Coleman, J.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fYear :
2012
fDate :
23-27 Sept. 2012
Firstpage :
776
Lastpage :
777
Abstract :
We describe the metalorganic chemical vapor deposition and patterning by electron beam lithography and selective area growth or wet chemical etching of quantum dot and inverted quantum dot (nanopore) structures suitable for diode lasers.
Keywords :
MOCVD; electron beam lithography; etching; nanoporous materials; semiconductor lasers; semiconductor quantum dots; diode lasers; electron beam lithography; inverted quantum dot structures; nanopores; quantum dots; selective area growth; selective area metalorganic chemical vapor deposition; wet chemical etching; Chemicals; Diode lasers; Electron beams; Epitaxial growth; Etching; Quantum dot lasers; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
Type :
conf
DOI :
10.1109/IPCon.2012.6358853
Filename :
6358853
Link To Document :
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