• DocumentCode
    578050
  • Title

    Nanopores and quantum dots by selective area metalorganic chemical vapor deposition

  • Author

    Coleman, J.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    776
  • Lastpage
    777
  • Abstract
    We describe the metalorganic chemical vapor deposition and patterning by electron beam lithography and selective area growth or wet chemical etching of quantum dot and inverted quantum dot (nanopore) structures suitable for diode lasers.
  • Keywords
    MOCVD; electron beam lithography; etching; nanoporous materials; semiconductor lasers; semiconductor quantum dots; diode lasers; electron beam lithography; inverted quantum dot structures; nanopores; quantum dots; selective area growth; selective area metalorganic chemical vapor deposition; wet chemical etching; Chemicals; Diode lasers; Electron beams; Epitaxial growth; Etching; Quantum dot lasers; Quantum dots;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358853
  • Filename
    6358853
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=578050