Title :
Thermal analysis of self-heating effect in GaInAsP/InP membrane DFB laser on Si substrate
Author :
Doi, Kyohei ; Shindo, Takahiko ; Futami, Mitsuaki ; Amemiya, Tomohiro ; Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Toward realization of an ultra-low-power-consumption semiconductor light source for on-chip optical interconnection, thermal characteristics of a membrane DFB laser were theoretically investigated. From numerical analysis, the thermal resistance of the membrane laser was estimated to be 6100 K/W, which does not affect to lasing characteristics of the membrane DFB laser due to low power operation capability.
Keywords :
distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; membranes; numerical analysis; optical interconnections; quantum well lasers; thermal analysis; thermal resistance; GaInAsP-InP; Si; lasing characteristics; low power operation capability; membrane DFB Laser; numerical analysis; on-chip optical interconnection; self-heating effect; thermal analysis; thermal resistance; ultralow-power-consumption semiconductor light source; Abstracts; Delay; Laser theory; RNA; Thermal resistance;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358872
