Thermal analysis of self-heating effect in GaInAsP/InP membrane DFB laser on Si substrate

Author

Doi, Kyohei ; Shindo, Takahiko ; Futami, Mitsuaki ; Amemiya, Tomohiro ; Nishiyama, Naoto ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2012

fDate

23-27 Sept. 2012

Firstpage

814

Lastpage

815

Abstract

Toward realization of an ultra-low-power-consumption semiconductor light source for on-chip optical interconnection, thermal characteristics of a membrane DFB laser were theoretically investigated. From numerical analysis, the thermal resistance of the membrane laser was estimated to be 6100 K/W, which does not affect to lasing characteristics of the membrane DFB laser due to low power operation capability.

Keywords

distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; membranes; numerical analysis; optical interconnections; quantum well lasers; thermal analysis; thermal resistance; GaInAsP-InP; Si; lasing characteristics; low power operation capability; membrane DFB Laser; numerical analysis; on-chip optical interconnection; self-heating effect; thermal analysis; thermal resistance; ultralow-power-consumption semiconductor light source; Abstracts; Delay; Laser theory; RNA; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Conference (IPC), 2012 IEEE

Conference_Location

Burlingame, CA

Print_ISBN

978-1-4577-0731-5

Type

conf

DOI

10.1109/IPCon.2012.6358872

Filename

6358872