DocumentCode :
57823
Title :
Evolution of Leakage Current Paths in MC-Si PV Modules From Leading Manufacturers Undergoing High-Voltage Bias Testing
Author :
Dhere, Neelkanth G. ; Shiradkar, Narendra S. ; Schneller, Eric
Author_Institution :
Florida Solar Energy Center, Univ. of Central Florida, Cocoa, FL, USA
Volume :
4
Issue :
2
fYear :
2014
fDate :
Mar-14
Firstpage :
654
Lastpage :
658
Abstract :
The evolution of leakage currents in photovoltaic modules undergoing outdoor high-voltage bias testing is studied using data from high-voltage bias testing of multicrystalline silicon modules from leading manufacturers. An analysis of the module leakage currents as a function of environmental conditions including temperature, relative humidity, rain, and wetness is carried out. The behavior of the modules was found to be dependent on the module construction and the materials used. The Arrhenius model was used to fit the experimental data and activation energies were computed for various relative humidity values. The effect of dew and rain (wetness) on the front glass was investigated. Changes in the leakage current during dry conditions were studied using the temperature dependence of resistivity of bulk soda-lime glass. Because of the approximately tenfold increase in leakage currents during the wet conditions, it is suggested that the accelerated tests should not be limited exclusively to noncondensing environments but should also be complemented with tests that include wet conditions.
Keywords :
elemental semiconductors; humidity; leakage currents; semiconductor device testing; silicon; solar cells; Arrhenius model; MC-Si PV modules; Si; activation energy; bulk soda-lime glass; dew effect; high-voltage bias testing; humidity; leakage current; multicrystalline silicon modules; resistivity; temperature dependence; Glass; Leakage currents; Photovoltaic systems; Rain; Temperature measurement; Testing; Degradation; high-voltage bias; leakage current; photovoltaic (PV) cells; photovoltaic systems; potential-induced degradation; reliability; system voltage stress;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2013.2294764
Filename :
6710150
Link To Document :
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