DocumentCode :
578501
Title :
Impact of process parameters of TiN cap formation on threshold voltage and gate leakage in HKMG last integration
Author :
Erben, E. ; Hempel, K. ; Triyoso, D.H. ; Zhang, H. ; Metzger, J. ; Binder, R. ; Prindle, C. ; Carter, R. ; Wei, A.
Author_Institution :
Technol. Dev., GLOBALFOUNDRIES Dresden, Dresden, Germany
fYear :
2012
fDate :
24-26 Sept. 2012
Firstpage :
173
Lastpage :
174
Abstract :
In this work factors influencing threshold voltage in replacement gate integration are investigated. Using DOE, the impact of TiN deposition parameters on Vt,lin and gate leakage is studied. 3D atom probe is used to determine the oxygen and nitrogen profiles within the gate stack.
Keywords :
CMOS integrated circuits; MOSFET; high-k dielectric thin films; titanium compounds; 3D atom probe; CMOS flow; DOE; HKMG last integration devices; NFET; PFET; TiN; cap layer deposition parameters; gate leakage; gate stack; high-k metal gate; nitrogen profiles; oxygen profiles; replacement gate integration; threshold voltage; Hafnium oxide; Nitrogen; Performance evaluation; Tin; 3D atom probe; DOE; PVD; TiN; replacement gate; threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-1717-7
Type :
conf
DOI :
10.1109/ISCDG.2012.6360028
Filename :
6360028
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=578501
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