• DocumentCode
    578501
  • Title

    Impact of process parameters of TiN cap formation on threshold voltage and gate leakage in HKMG last integration

  • Author

    Erben, E. ; Hempel, K. ; Triyoso, D.H. ; Zhang, H. ; Metzger, J. ; Binder, R. ; Prindle, C. ; Carter, R. ; Wei, A.

  • Author_Institution
    Technol. Dev., GLOBALFOUNDRIES Dresden, Dresden, Germany
  • fYear
    2012
  • fDate
    24-26 Sept. 2012
  • Firstpage
    173
  • Lastpage
    174
  • Abstract
    In this work factors influencing threshold voltage in replacement gate integration are investigated. Using DOE, the impact of TiN deposition parameters on Vt,lin and gate leakage is studied. 3D atom probe is used to determine the oxygen and nitrogen profiles within the gate stack.
  • Keywords
    CMOS integrated circuits; MOSFET; high-k dielectric thin films; titanium compounds; 3D atom probe; CMOS flow; DOE; HKMG last integration devices; NFET; PFET; TiN; cap layer deposition parameters; gate leakage; gate stack; high-k metal gate; nitrogen profiles; oxygen profiles; replacement gate integration; threshold voltage; Hafnium oxide; Nitrogen; Performance evaluation; Tin; 3D atom probe; DOE; PVD; TiN; replacement gate; threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
  • Conference_Location
    Grenoble
  • Print_ISBN
    978-1-4673-1717-7
  • Type

    conf

  • DOI
    10.1109/ISCDG.2012.6360028
  • Filename
    6360028
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=578501