Title :
Investigation of x-ray damage effects on 4T CMOS image sensors
Author :
Tan, J. ; Theuwissen, A.J.P.
Author_Institution :
Electron. Instrum. Lab., Delft Univ. of Technol., Delft, Netherlands
Abstract :
This paper presents a study on the radiation-induced trapped charges and the pixel parameter degradation of a 4T CMOS image sensor through the pixel bias voltage technique and trap-annealing. The bias voltage during the radiation has an effect on the yield of oxide trapped charges. The post-radiation shallow trapped charges can be quickly annealed at room temperature. The pixel dark random noise is recovered by annealing the positive trapped charges, while a subsequent annealing causes the pixel noise to rebound by means of the interface traps.
Keywords :
CMOS image sensors; X-ray effects; annealing; interface states; random noise; CMOS image sensor; X-ray damage effect; interface trap; pixel bias voltage technique; pixel dark random noise; pixel parameter degradation; post radiation shallow trapped charge; radiation induced trapped charge; trap annealing; Annealing; Degradation; Energy measurement; Logic gates; Noise; Reliability; Voltage measurement; CMOS image sensor; annealing; dark random noise; pixel bias; radiation; trapped charges;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-1717-7
DOI :
10.1109/ISCDG.2012.6360038
