Study of energy capability and failure of LDMOSFET at different ambient temperatures

Author

Anumeha ; Basavalingappa, Adarsh ; Sheu, Gene

Author_Institution

Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan

fYear

2012

fDate

24-26 Sept. 2012

Firstpage

127

Lastpage

130

Abstract

The thermal failure mechanism of lateral double diffused MOSFET (LDMOS) has been studied for different ambient temperatures in this work. The energy handling capability of the device is studied using simulation and analytical modeling. The relationship between critical temperature and ambient temperature is investigated in detail. The device failure occurs when the gate control is lost due to thermal runaway. At this instant the intrinsic carrier concentration becomes equal to the background doping concentration and depletion in channel is totally wiped off.

Keywords

MOSFET; carrier density; failure analysis; semiconductor device models; semiconductor device reliability; LDMOSFET; ambient temperatures; background doping concentration; channel depletion; critical temperature; device failure; energy capability; gate control; intrinsic carrier concentration; lateral double diffused MOSFET; thermal failure mechanism; thermal runaway; Integrated circuits; Logic gates; Performance evaluation; Reliability; LDMOSFET; TCAD simulation; ambient temperature; critical temperature; energy capability; thermal failure;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International

Conference_Location

Grenoble

Print_ISBN

978-1-4673-1717-7

Type

conf

DOI

10.1109/ISCDG.2012.6360039

Filename

6360039