Title :
Study of energy capability and failure of LDMOSFET at different ambient temperatures
Author :
Anumeha ; Basavalingappa, Adarsh ; Sheu, Gene
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
Abstract :
The thermal failure mechanism of lateral double diffused MOSFET (LDMOS) has been studied for different ambient temperatures in this work. The energy handling capability of the device is studied using simulation and analytical modeling. The relationship between critical temperature and ambient temperature is investigated in detail. The device failure occurs when the gate control is lost due to thermal runaway. At this instant the intrinsic carrier concentration becomes equal to the background doping concentration and depletion in channel is totally wiped off.
Keywords :
MOSFET; carrier density; failure analysis; semiconductor device models; semiconductor device reliability; LDMOSFET; ambient temperatures; background doping concentration; channel depletion; critical temperature; device failure; energy capability; gate control; intrinsic carrier concentration; lateral double diffused MOSFET; thermal failure mechanism; thermal runaway; Integrated circuits; Logic gates; Performance evaluation; Reliability; LDMOSFET; TCAD simulation; ambient temperature; critical temperature; energy capability; thermal failure;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-1717-7
DOI :
10.1109/ISCDG.2012.6360039
