Ultra wideband cascaded low noise amplifier implemented in 100-nm GaAs metamorphic-HEMT technology

Author

Dyskin, Aleksey ; Ritter, Dan ; Kallfass, Ingmar

Author_Institution

Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel

fYear

2012

fDate

3-5 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

We present a state-of-the-art broadband (60 to 90 GHz, 40%) 4-stage low noise amplifier (LNA) in a GaAs metamorphic high electron mobility transistor (mHEMT) technology. The LNA, spanning several waveguide bands, is dedicated to radiometry, communication and instrumentation applications. It consumes 56 mW and exhibits a gain of more than 19 dB with flat frequency response and average noise figure of 2.5 dB. The design makes use of reactive feedback by source degeneration. Broadband matching was achieved by using enhanced L-C matching networks. Gate width was optimized for best noise figure and gain performance.

Keywords

gallium arsenide; high electron mobility transistors; low noise amplifiers; millimetre wave amplifiers; millimetre wave transistors; GaAs; LNA; communication applications; enhanced L-C matching networks; frequency 60 GHz to 90 GHz; instrumentation applications; metamorphic high electron mobility transistor technology; metamorphic-HEMT technology; noise figure 2.5 dB; radiometry applications; size 100 nm; state-of-the-art broadband 4-stage low noise amplifier; ultrawideband cascaded low noise amplifier; Broadband amplifiers; Gain; Gallium arsenide; Noise figure; mHEMTs; Broadband LNA; E-Band; GaAs mHEMT; V-Band; W-Band; inductive degeneration;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on

Conference_Location

Potsdam

ISSN

2161-0819

Print_ISBN

978-1-4673-4454-8

Electronic_ISBN

2161-0819

Type

conf

DOI

10.1109/ISSSE.2012.6374348

Filename

6374348