• DocumentCode
    580937
  • Title

    A polynomial time triple patterning algorithm for cell based row-structure layout

  • Author

    Tian, Haitong ; Zhang, Hongbo ; Ma, Qiang ; Xiao, Zigang ; Wong, Martin D F

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana Champaign, Urbana, IL, USA
  • fYear
    2012
  • fDate
    5-8 Nov. 2012
  • Firstpage
    57
  • Lastpage
    64
  • Abstract
    As minimum feature size keeps shrinking, and the next generation lithography (e.g, EUV) further delays, double patterning lithography (DPL) has been widely recognized as a feasible lithography solution in 20nm technology node. However, as technology continues to scale to 14/10nm, DPL begins to show its limitations and usually generates too many undesirable stitches. Triple patterning lithography (TPL) is a natural extension of DPL to conquer the difficulties and achieve a stitch-free layout decomposition. In this paper, we study the standard cell based row-structure layout decomposition problem in TPL. Although the general TPL layout decomposition problem is NP-hard, in this paper we will show that for standard cell based TPL layout decomposition problem, it is polynomial time solvable. We propose a polynomial time algorithm to solve the problem optimally and our approach has the capability to find all stitch-free decompositions. Color balancing is also considered to ensure a balanced triple patterning decomposition. To speed up the algorithm, we further propose a hierarchical algorithm for standard cell based layout, which can reduce the run time by 34.5% on average without sacrificing the optimality. We also extend our algorithm to allow stitches for complex circuit designs, and our algorithm guarantees to find optimal solutions with minimum number of stitches.
  • Keywords
    graph colouring; integrated circuit layout; lithography; cell based row-structure layout; color balancing; next generation lithography; polynomial time algorithm; polynomial time triple patterning algorithm; size 20 nm; standard cell based layout; stitch free layout decomposition; stitch-free decomposition; Color; Law; Layout; Lithography; Polynomials; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design (ICCAD), 2012 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Type

    conf

  • Filename
    6386589