Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes

Author

Abbate, C. ; Busatto, G. ; Cova, P. ; Delmonte, N. ; Giuliani, F. ; Iannuzzo, F. ; Sanseverino, A. ; Velardi, F.

Author_Institution

DIEI, Univ. degli Studi di Cassino e del Lazio Meridionale, Cassino, Italy

Volume

62

Issue

1

fYear

2015

fDate

Feb. 2015

Firstpage

202

Lastpage

209

Abstract

A study is presented aimed at describing phenomena involved in Single Event Burnout induced by heavy ion irradiation in SiC Schottky diodes. On the basis of experimental data obtained for ⁷⁹Br irradiation at different energies, electro-thermal FEM is used to demonstrate that the failure is caused by a strong local increase of the semiconductor temperature. With respect to previous studies the temperature dependent thermal material properties were added. The critical ion energy calculated by this model is in agreement with literature experimental results. The substrate doping dependence of the SEE robustness was analyzed, proving the effectiveness of the developed model for device technological improvements.

Keywords

Schottky diodes; failure analysis; finite element analysis; ion beam effects; semiconductor device models; semiconductor doping; silicon compounds; wide band gap semiconductors; ⁷⁹Br irradiation; SEE robustness; Schottky diodes; SiC; critical ion energy; electrothermal FEM; failure analysis; heavy ion irradiation-induced thermal damage; semiconductor temperature; single event burnout; substrate doping; thermal material properties; Computational modeling; Current density; Density measurement; Power system measurements; Radiation effects; Schottky diodes; Silicon carbide; Radiation effects; Schottky diodes; silicon carbide;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2387014

Filename

7035170