• DocumentCode
    58218
  • Title

    Reducing Environmentally Induced Defects While Maintaining Productivity

  • Author

    Van Roijen, R. ; Conti, Susan G. ; Keyser, R. ; Arndt, Roger ; Burda, R. ; Ayala, Javier ; Henry, R.O. ; Levy, Jacob ; Maxson, J. ; Meyette, E. ; Steer, W. ; Tabakman, K. ; Chienfan Yu

  • Author_Institution
    IBM Microelectron. Div., Hopewell Junction, VA, USA
  • Volume
    26
  • Issue
    1
  • fYear
    2013
  • fDate
    Feb. 2013
  • Firstpage
    35
  • Lastpage
    41
  • Abstract
    In semiconductor manufacturing, we expect the cause of defects to be process or tool related. However, at the 90 nm technology node and beyond we find that defects can be caused by issues related to the wafers´ environment, such as processing of other wafers in the same tool or in the same carrier, or by seemingly innocuous actions. We pay special attention to the role of the mini-environment, which is deemed essential to achieving low particle counts for advanced technology nodes. We show defects that are caused by the environment, and some which are specifically related to the use of the mini-environment. We discuss several ways to reduce the sensitivity to environmental factors. Process and tool changes are found that eliminate yield detractors. We also present a workaround that has helped reduce the impact of queue time restrictions on cycle time.
  • Keywords
    inspection; semiconductor device manufacture; advanced technology nodes; environmental factors; environmentally induced defect reduction; queue time restrictions; semiconductor manufacturing; sensitivity reduction; wafer environment; yield detractors; Contamination; Epitaxial growth; Etching; Inspection; Silicon germanium; Strips; Defect classification; surface contamination;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2012.2225114
  • Filename
    6332534