Title :
Design of a Q-Band Eight-Way Lumped Power Divider in 90 nm CMOS Technology
Author :
Wen-Feng Liang ; Wei Hong ; Ji-Xin Chen ; Xin Jiang
Author_Institution :
Sch. of Inf. Sci. & Eng., Southeast Univ., Nanjing, China
Abstract :
A Q-band eight-way power divider in CMOS technology is presented. This divider is designed using lumped elements to realize a compact layout. Parametric analyses for the parasitic effects are given using simplified inductor/capacitor models. Measurement in the 37-49 GHz frequency range shows an insertion loss less than 2.7 dB, the input/output return loss better than -13.7 dB and the port-to-port isolation better than 22.5 dB (more than 30 dB over 44-49 GHz).
Keywords :
CMOS integrated circuits; capacitors; inductors; integrated circuit layout; millimetre wave integrated circuits; power dividers; CMOS technology; Q-band eight-way lumped power divider design; compact layout; frequency 37 GHz to 49 GHz; lumped elements; parametric analyses; parasitic effects; simplified capacitor models; simplified inductor models; size 90 nm; CMOS integrated circuits; CMOS technology; Capacitors; Inductors; Insertion loss; Loss measurement; Power dividers; CMOS; Q-band; millimeter-wave; power divider;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2013.2295236
