Design of a Q-Band Eight-Way Lumped Power Divider in 90 nm CMOS Technology

Author

Wen-Feng Liang ; Wei Hong ; Ji-Xin Chen ; Xin Jiang

Author_Institution

Sch. of Inf. Sci. & Eng., Southeast Univ., Nanjing, China

Volume

24

Issue

3

fYear

2014

fDate

Mar-14

Firstpage

173

Lastpage

175

Abstract

A Q-band eight-way power divider in CMOS technology is presented. This divider is designed using lumped elements to realize a compact layout. Parametric analyses for the parasitic effects are given using simplified inductor/capacitor models. Measurement in the 37-49 GHz frequency range shows an insertion loss less than 2.7 dB, the input/output return loss better than -13.7 dB and the port-to-port isolation better than 22.5 dB (more than 30 dB over 44-49 GHz).

Keywords

CMOS integrated circuits; capacitors; inductors; integrated circuit layout; millimetre wave integrated circuits; power dividers; CMOS technology; Q-band eight-way lumped power divider design; compact layout; frequency 37 GHz to 49 GHz; lumped elements; parametric analyses; parasitic effects; simplified capacitor models; simplified inductor models; size 90 nm; CMOS integrated circuits; CMOS technology; Capacitors; Inductors; Insertion loss; Loss measurement; Power dividers; CMOS; Q-band; millimeter-wave; power divider;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2013.2295236

Filename

6710189