Flexible NAND-Like Organic Ferroelectric Memory Array

Author

Kam, Benjamin ; Tung-Huei Ke ; Chasin, Adrian ; Tyagi, Manav ; Cristoferi, Claudio ; Tempelaars, Karin ; van Breemen, Albert J. J. M. ; Myny, Kris ; Schols, Sarah ; Genoe, Jan ; Gelinck, Gerwin H. ; Heremans, Paul

Author_Institution

Dept. of Electr. Eng., KU Leuven, Leuven, Belgium

Volume

35

Issue

5

fYear

2014

fDate

May-14

Firstpage

539

Lastpage

541

Abstract

We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for select or access transistors. As proof of principle, a 1 × 4 NAND-like string is fabricated and characterized. Retention up to one month and endurance up to 2500 cycles are shown. Read and write disturb measurements show that the memory array can potentially be scaled up to 8 kbits.

Keywords

NAND circuits; ferroelectric storage; field effect transistors; flash memories; flexible electronics; semiconductor device reliability; NAND-like string; OFeFET; flash memory; flexible NAND-like organic ferroelectric memory array; flexible substrate; organic ferroelectric field-effect transistor; read and write disturb measurement; transistor memory density; Arrays; Logic gates; Nonvolatile memory; Plastics; Substrates; Switches; Transistors; Ferroelectric; NAND; memory array; memory array.; nonvolatile memory; organic semiconductors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2313029

Filename

6781647