Characteristics of RF-DC conversion circuit for wireless power transmission using the low resistance GaN schottky barrier diode

Author

Fujimori, K. ; Wagi, T. ; Tsuruta, K. ; Nogi, S. ; Ozawa, Y. ; Furukawa, M. ; Fujiwara, Toshihito

Author_Institution

Grad. Sch. of Natural Sci. & Technol., Okayama Univ., Okayama, Japan

fYear

2012

fDate

Oct. 29 2012-Nov. 2 2012

Firstpage

190

Lastpage

193

Abstract

RF-DC conversion circuit is one of the most important components in the wireless power transmission technologies. For realizing highly efficient wireless power transmission, it is necessary to design the RF-DC conversion circuit with high conversion efficiency, and the designing method of the circuit is actively investigating. In this paper, we manufacture the GaN schottky barrier diode for a high frequency rectification, and discuss characteristics of the GaN circuit by comparing to the Si circuit. As a result, optimal electrical parameters of the diode are demonstrated for obtaining higher conversion efficiency in the RF-DC conversion circuit.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; elemental semiconductors; gallium compounds; microwave power transmission; silicon; wide band gap semiconductors; GaN; RF-DC conversion circuit; Si; high frequency rectification; low resistance schottky barrier diode; wireless power transmission; Capacitance; Gallium nitride; Junctions; Microwave circuits; Power transmission; Resistance; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation (ISAP), 2012 International Symposium on

Conference_Location

Nagoys

Print_ISBN

978-1-4673-1001-7

Type

conf

Filename

6393883