A 210–227 GHz Transmitter With Integrated On-Chip Antenna in 90 nm CMOS Technology

Author

Khamaisi, Bassam ; Jameson, Samuel ; Socher, Eran

Author_Institution

Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel

Volume

3

Issue

2

fYear

2013

fDate

Mar-13

Firstpage

141

Lastpage

150

Abstract

This paper presents a transmitter operating in the 210-227 GHz in 90 nm CMOS, based on a Colpitts VCO. The third harmonic of the generated VCO fundamental signal is coupled to an on-chip dipole antenna. A simplified model is presented for the operation and the design of the circuit, which compares well with simulated and measured results. The transmitter achieves an EIRP of +1.8 dBm at 217 GHz and directivity of about +10 dBi. The circuit consumes 128 mW of DC power and an area of 0.53 mm².

Keywords

CMOS integrated circuits; dipole antennas; harmonic generation; transmitting antennas; voltage-controlled oscillators; CMOS technology; Colpitts VCO; DC power; EIRP; circuit design; frequency 210 GHz to 227 GHz; integrated on-chip antenna; on-chip dipole antenna; power 128 mW; third harmonic generated VCO fundamental signal; transmitter; wavelength 90 nm; Dipole antennas; Harmonic analysis; Logic gates; Oscillators; Transistors; Transmitters; CMOS; THz imaging; dipole antenna; millimeter-wave circuits; on-chip antenna; transmitter; voltage-controlled oscillator;

fLanguage

English

Journal_Title

Terahertz Science and Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-342X

Type

jour

DOI

10.1109/TTHZ.2012.2236836

Filename

6462007