DocumentCode :
584929
Title :
Properties of high υ/γ diodes using thin foil anodes
Author :
Gilad, P. ; Kaplan, Z. ; Miller, S. ; Wachtel, J. ; Zeiberg, N. ; Zinamon, Z.
Author_Institution :
Weizmann Inst. of Sci., Rehovot, Israel
Volume :
1
fYear :
1977
fDate :
3-5 Oct. 1977
Firstpage :
219
Lastpage :
230
Abstract :
Properties of high υ/γ diodes using thin anode foils have been studied both experimentally and theoretically. It has been demonstrated that these diodes are very useful in accelerating the pinch formation, in production of intense ion beams from the pinch area and in enhanced energy deposition in the focal area of the electron beam.
Keywords :
anodes; electron beams; ion beams; pinch effect; plasma diodes; thin films; electron beam; energy deposition enhancement; high υ-γ diode; ion beam; pinch formation acceleration; thin foil anode; Acceleration; Aluminum; Anodes; Ion beams; Ion emission; Monitoring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Beam Research & Technology, 1977 2nd International Topical Conference on
Conference_Location :
Ithaca, NY
Type :
conf
Filename :
6396190
Link To Document :
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