• DocumentCode
    584929
  • Title

    Properties of high υ/γ diodes using thin foil anodes

  • Author

    Gilad, P. ; Kaplan, Z. ; Miller, S. ; Wachtel, J. ; Zeiberg, N. ; Zinamon, Z.

  • Author_Institution
    Weizmann Inst. of Sci., Rehovot, Israel
  • Volume
    1
  • fYear
    1977
  • fDate
    3-5 Oct. 1977
  • Firstpage
    219
  • Lastpage
    230
  • Abstract
    Properties of high υ/γ diodes using thin anode foils have been studied both experimentally and theoretically. It has been demonstrated that these diodes are very useful in accelerating the pinch formation, in production of intense ion beams from the pinch area and in enhanced energy deposition in the focal area of the electron beam.
  • Keywords
    anodes; electron beams; ion beams; pinch effect; plasma diodes; thin films; electron beam; energy deposition enhancement; high υ-γ diode; ion beam; pinch formation acceleration; thin foil anode; Acceleration; Aluminum; Anodes; Ion beams; Ion emission; Monitoring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Beam Research & Technology, 1977 2nd International Topical Conference on
  • Conference_Location
    Ithaca, NY
  • Type

    conf

  • Filename
    6396190
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=584929