DocumentCode
585069
Title
Interaction of the high current relativistic electron beam with the monocrystalline target
Author
Meshcherov, B.R. ; Tumanov, V.I.
Author_Institution
I.V.Kurchatov Inst. of Atomic Energy Moscow, Moscow, Russia
fYear
1990
fDate
2-5 July 1990
Firstpage
763
Lastpage
768
Abstract
Application possibility of the channeling radiation was investigated.
Keywords
channelling radiation; electron beam effects; elemental semiconductors; silicon; Si; channeling radiation; critical current; high current relativistic electron beam; monocrystalline radiator; monocrystalline target; radiation damage; silicon monocrystals; Crystals; Electron beams; Films; Integrated circuits; Isotopes; Radiation effects; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
High-Power Particle Beams, 1990 8th International Conference on
Conference_Location
Novosibirsk
Print_ISBN
9.7898102055e+012
Type
conf
Filename
6396357
Link To Document