Investigation on conductive electromagnetic pulse (EMP) effects on the breakdown of GaAs MESFET-built power amplifiers (PA)

Author

Zhou, Liang ; Lin, Liang ; Luo, Wei ; Yin, Wen-Yan

Author_Institution

Center for Microwave & RF Technol., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

1

Lastpage

5

Abstract

Investigation on conductive electromagnetic pulse (EMP) effects on performance degradation and breakdown of GaAs MESFET-based power amplifiers (PA) are performed in this paper. One special measurement system is built, which consists of an adjustable EMP source, one controller, couplers, limiters, attenuators, one four-channel oscilloscope, and DUT. The PA performance degradation and electrothermal breakdown of its first-stage GaAs MESFET are observed and analyzed for the injected EMP with different widths, and its energy capabilities are characterized and studied in detail.

Keywords

III-V semiconductors; Schottky gate field effect transistors; electromagnetic pulse; gallium arsenide; power amplifiers; semiconductor device breakdown; DUT; EMP effect; GaAs; GaAs MESFET; PA performance degradation; attenuator; conductive electromagnetic pulse; controller; coupler; electrothermal breakdown; energy capability; four-channel oscilloscope; limiter; power amplifier; Degradation; Electric breakdown; Electromagnetic interference; Gallium arsenide; MESFETs; Microwave circuits; Pulse measurements; Breakdown; EMP; Electrothermal; GaAs MESFET; Pulse Width;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility (EMC EUROPE), 2012 International Symposium on

Conference_Location

Rome

ISSN

2325-0356

Print_ISBN

978-1-4673-0718-5

Type

conf

DOI

10.1109/EMCEurope.2012.6396757

Filename

6396757