DocumentCode :
585790
Title :
Exploiting memristive device behavior for emerging digital logic and memory applications
Author :
Rose, Garret S.
Author_Institution :
Inf. Directorate, Air Force Res. Lab., Rome, NY, USA
fYear :
2012
fDate :
12-14 Sept. 2012
Firstpage :
292
Lastpage :
292
Abstract :
In many ways, conventional integrated circuit technology (i.e., bulk Si CMOS) continues to follow the predictions of Moore´s Law but true physical limits are lurking around the corner. Even as the scaling of conventional technologies continues many performance issues (e.g., high power dissipation, increasing thermal effects, and process variations) are forcing circuit and microarchitectural designers to look for novel approaches for emerging systems. One such direction is to utilize the unconventional behavior of novel nanoelectronic devices (e.g., memristors) to develop novel computational architectures that may not be reasonably implementable using conventional CMOS. In this way, emerging architectures may not only allow continued performance improvements but may also open new avenues for computing. The particular technology of interest for this talk, the memristor or memory resistor, has gained a lot of interest in recent years due to its great potential for emerging circuits and systems. We have been working with several collaborators to develop memristive device technologies with the goal of integrating these devices into digital circuits and systems. As part of this talk, an overview of memristors and memristive systems will be provided along with some exploration of how these devices can be leveraged in digital logic and memory circuits.
Keywords :
CMOS logic circuits; digital circuits; logic circuits; memristors; CMOS; Moore´s Law; computational architectures; digital circuits; digital logic; integrated circuit technology; memory circuits; memory resistor; memristive device behavior; memristor; microarchitectural designers; nanoelectronic devices; Circuit synthesis; Computers; Educational institutions; Laboratories; Memristors; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOC Conference (SOCC), 2012 IEEE International
Conference_Location :
Niagara Falls, NY
ISSN :
2164-1676
Print_ISBN :
978-1-4673-1294-3
Type :
conf
DOI :
10.1109/SOCC.2012.6398365
Filename :
6398365
Link To Document :
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