Electro-thermal modeling and measurements of SiGe HBTs

Author

Dieng, M. ; Rafei, A.E. ; Sommet, Raphael ; Quere, R.

Author_Institution

XLIM, Brive-la-Gaillarde, France

fYear

2012

fDate

25-27 Sept. 2012

Firstpage

1

Lastpage

4

Abstract

This paper deals with a comparison between electro-thermal nonlinear simulation and measurements performed on a Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs). The first part describes the simulation approach developed with ANSYS 3D Finite Element (FE) model. The second part describes the measurement process. This one is based on Low Frequency electrical impedance measurements generally achieved with S-parameters Vector Network Analyzer setup. Finally the FE model is compared to a Cauer circuit extracted to represent the measured data.

Keywords

S-parameters; electrothermal launchers; finite element analysis; heterojunction bipolar transistors; passive filters; silicon compounds; vectors; ANSYS 3D finite element model; Cauer circuit; S-parameters vector network analyzer setup; SiGe; SiGe HBT; SiGe heterojunction bipolar transistors; electro-thermal modeling; electro-thermal nonlinear simulation; low frequency electrical impedance measurement; measurement process; silicon germanium; Finite element methods; Frequency measurement; Impedance; Integrated circuit modeling; Silicon; Silicon germanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal Investigations of ICs and Systems (THERMINIC), 2012 18th International Workshop on

Conference_Location

Budapest

Print_ISBN

978-1-4673-1882-2

Type

conf

Filename

6400621