• DocumentCode
    58657
  • Title

    Nano-power tunable bump circuit using wide-input-range pseudo-differential transconductor

  • Author

    Junjie Lu ; Tan Yang ; Jahan, Md Sarwar ; Holleman, Jeremy

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
  • Volume
    50
  • Issue
    13
  • fYear
    2014
  • fDate
    June 19 2014
  • Firstpage
    921
  • Lastpage
    923
  • Abstract
    An ultra-low-power tunable bump circuit is presented. It incorporates a novel wide-input-range tunable pseudo-differential transconductor linearised using the drain resistances of saturated transistors. Measurement results show that the transconductor has a 5 V differential input range with <;20% of linearity error. The bump circuit demonstrates tunability of the centre, width and height, consuming 18.9 nW power from a 3 V supply, occupying 988 μm2 in a 0.13 μm CMOS process.
  • Keywords
    CMOS integrated circuits; circuit tuning; low-power electronics; nanoelectronics; power transistors; CMOS process; drain resistances; linearity error; nano-power tunable bump circuit; power 0.13 nW; power 18.9 nW; saturated transistors; ultra-low-power tunable bump circuit; voltage 3 V; voltage 5 V; wide-input-range pseudodifferential transconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.0920
  • Filename
    6838835