DocumentCode
586884
Title
DC temperature measurements for power gain monitoring in RF power amplifiers
Author
Altet, Josep ; Mateo, D. ; Gomez, David ; Perpina, Xavier ; Vellvehi, Miquel ; Jorda, Xavier
Author_Institution
Electron. Eng. Dept., Univ. Politec. de Catalunya, Barcelona, Spain
fYear
2012
fDate
5-8 Nov. 2012
Firstpage
1
Lastpage
8
Abstract
In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature sensor embedded within the same silicon die, which can be used for a BIST approach, and an Infra Red camera, with applications to failure analysis and product debugging.
Keywords
failure analysis; power amplifiers; DC temperature measurement; RF power amplifiers; circuit under test; failure analysis; infrared camera; power dissipated; power gain monitoring; product debugging; silicon die; steady state temperature; temperature sensor; Couplings; Radio frequency; Silicon; Temperature measurement; Temperature sensors; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference (ITC), 2012 IEEE International
Conference_Location
Anaheim, CA
ISSN
1089-3539
Print_ISBN
978-1-4673-1594-4
Type
conf
DOI
10.1109/TEST.2012.6401589
Filename
6401589
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