Title :
High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C
Author :
Pathrose, Jerrin ; Xiaohui Gong ; Lei Zou ; Jeongwook Koh ; Chai, Kevin T. C. ; Minkyu Je ; Yong Ping Xu
Author_Institution :
Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
This paper describes a bandgap reference with temperature range up to 300°C. Fabricated in a PDSOI CMOS technology, the bandgap reference achieves a box model temperature coefficient of 138ppm from 25 to 300°C, and line regulation less than 1.5mv/V. The minimum operating voltage is 2V and consumes merely 285μW at room temperature over several samples.
Keywords :
CMOS analogue integrated circuits; elemental semiconductors; silicon-on-insulator; PDSOI CMOS technology; box model temperature coefficient; high-temperature bandgap reference; line regulation; operating temperature; power 285 muW; room temperature; temperature 25 degC to 300 degC; voltage 2 V; Gain; Photonic band gap; Resistors; Temperature dependence; Temperature distribution; Temperature measurement; Voltage measurement; Bandgap Reference; High Temperature; Op-amp Offset; SOI; Temperature Compensation;
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2303-1
DOI :
10.1109/RFIT.2012.6401630
