A 77 GHz automotive radar transmitter in 65-nm CMOS

Author

Duong, H.T. ; Le, Hung V. ; Huynh, A.T. ; yang, Bo ; Zhang, Fang ; Evans, Robin J. ; Skafidas, E.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Melbourne, Melbourne, VIC, Australia

fYear

2012

fDate

21-23 Nov. 2012

Firstpage

171

Lastpage

173

Abstract

A single side band(SSB) 77 GHz transmitter for radar automotive applications is presented in this paper. The direct conversion transmitter consists of a SSB sub-harmonic up-convertion mixer and a 4-stage power amplifier(PA). The 38 GHz passive coupler and balun are designed to provide IQ differential LO from external input to drive the mixer. The proposed transmitter is fabricated in 65-nm CMOS. The measured transmitter has 1-dB output compression point of -2 dBm and a saturation output power of 0 dBm at 77 GHz. The leakage from LO to RF output is less than -33 dBm and the output matching is better than -18 dB from 65 to 80 GHz. The proposed transmitter power consumption is 130 mW and the silicon die-size is 1.0 × 2.7 mm².

Keywords

CMOS integrated circuits; field effect MIMIC; millimetre wave couplers; millimetre wave mixers; millimetre wave power amplifiers; millimetre wave radar; radio transmitters; road vehicle radar; 4-stage PA; 4-stage power amplifier; CMOS technology; IQ differential LO; SSB sub-harmonic up-convertion mixer; SSB transmitter; automotive radar transmitter; frequency 38 GHz; frequency 65 GHz to 80 GHz; passive coupler; power 130 mW; single side band transmitter; size 65 nm; Amplitude modulation; CMOS integrated circuits; Couplers; Impedance matching; Mixers; Radio frequency; Transmitters; CMOS; balun; coupler; mm-wave circuit; power amplifier; sub-harmonic mixer; transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4673-2303-1

Type

conf

DOI

10.1109/RFIT.2012.6401650

Filename

6401650