Dual-metal gate AlGaN/GaN high electron mobility transistors: A theoretical study

Author

Kean Boon Lee ; Haifeng Sun ; Li Yuan ; Weizhu Wang ; Selvaraj, S.L. ; Guo-Qiang Lo

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2012

fDate

21-23 Nov. 2012

Firstpage

186

Lastpage

188

Abstract

The effect of dual-metal gate (DMG) on AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated. An additional peak in the electric field is present in the interface between two metals in DMG device and leads to an enhancement in average drift velocity under the gate. Improvement in both output current and transconductance is observed in the device with DMG compared to its single-metal gate counterpart. Moreover, drain induced barrier lowering effect is suppressed as the device scales down to sub-micrometer due to the presence of screening effect in the channel potential in the DMG HEMTs.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; DMG HEMT; average drift velocity enhancement; channel potential; drain induced barrier lowering suppression effect; dual-metal gate high electron mobility transistor; electric field; screening effect; single-metal gate counterpart; submicrometer scale; transconductance; Decision support systems; Radio frequency; 2DEG HEMTs; HI-Nitride; dual-metal gate; short channel effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4673-2303-1

Type

conf

DOI

10.1109/RFIT.2012.6401655

Filename

6401655