• DocumentCode
    586931
  • Title

    Graphene-based spin diode and transistor

  • Author

    Zeng, M.G. ; Shen, L. ; Feng, Y.P.

  • Author_Institution
    Dept. of Phys., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2012
  • fDate
    Oct. 31 2012-Nov. 2 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate that spin polarization of a current in a graphene-based two-terminal device can be tuned by a source-drain voltage and the device functions as a bipolar spin diode. This is possible because of a symmetry selection rule. These properites allow the designs of spin transistor.
  • Keywords
    diodes; electric current; graphene; magnetoelectronics; transistors; C; device functions; graphene-based bipolar spin diode; graphene-based two-terminal device; source-drain voltage; spin transistor design; symmetry selection rule; Cobalt; Educational institutions; Transistors; graphene; spin diode; spin transistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    APMRC, 2012 Digest
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4673-4734-1
  • Type

    conf

  • Filename
    6401686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=586931