• DocumentCode
    587129
  • Title

    Power losses in two- and three-level three phase photovoltaic inverters equipped with IGBTs

  • Author

    Zhiping Chen ; Liqiang Yuan ; Zhengming Zhao ; Xiaoying Sun

  • Author_Institution
    Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
  • fYear
    2012
  • fDate
    21-24 Oct. 2012
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    To increase efficiency is an essential target in photovoltaic (PV) power generation system. The losses of the whole system consist of several parts. This paper focuses on the losses of the hard-switching devices. An improved method to calculate the device losses is proposed. And influences of different factors like DC link voltage, input power, switching frequency and power factor on the losses are considered. Then this paper compares the losses of conventional two-level inverter and of diode-clamped three-level inverter to provide the evaluation of power losses under different working conditions. This is helpful to design and optimize a certain PV inverter. Calculating results based on an actual three phase 10kW PV inverter are presented.
  • Keywords
    insulated gate bipolar transistors; invertors; losses; power factor; solar cells; IGBT; PV power generation system; diode-clamped three-level inverter; hard-switching devices losses; photovoltaic power generation system; power factor; power losses; switching frequency; three-level three phase photovoltaic inverters; two-level three phase photovoltaic inverters; Energy loss; Insulated gate bipolar transistors; Inverters; Semiconductor diodes; Switches; Switching loss; Topology; IGBT; Loss-calculation; photovoltaic; three-level;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Machines and Systems (ICEMS), 2012 15th International Conference on
  • Conference_Location
    Sapporo
  • Print_ISBN
    978-1-4673-2327-7
  • Type

    conf

  • Filename
    6401906