Title :
Determination of the Interface States in Amorphous/Crystalline Silicon Using Surface Photovoltage Spectroscopy
Author :
Hao Li ; Xiangbo Zeng ; Ping Yang ; Xiaodong Zhang ; Xiaobing Xie ; Jingyan Li ; Qiming Wang
Author_Institution :
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
Abstract :
The interface state level at amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions is identified with surface photovoltage spectroscopy (SPS). A positive slope alteration of SPS in 1.2 eV indicates there is a primarily empty state at Ev(c-Si)+0.75 eV. Using hydrogen plasma treatment (HPT) on c-Si surface, we observed a systematic variation in the SPS signal upon HPT time, which was associated to the change of interface state density. Our results show that the SPS can be used to optimize the heterojunction with intrinsic thin-layer solar cell preparation process.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; interface states; plasma materials processing; silicon; solar cells; surface photovoltage; HPT; SPS; amorphous-crystalline silicon heterojunctions; electron volt energy 1.2 eV; hydrogen plasma treatment; interface state density; interface state level; intrinsic thin-layer solar cell preparation process; positive slope alteration; surface photovoltage spectroscopy; Heterojunctions; Interface states; Photovoltaic cells; Plasmas; Silicon; Spectroscopy; Surface treatment; Defect level; heterojunction; solar cells; surface photovoltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2273171
