Title :
Noise analysis of a CMOS inverter using the Itô stochastic differential equation
Author :
Gawalwad, Balaji G. ; Sharma, Sanjeev Narayan
Author_Institution :
Electr. Eng. Dept., S.V. Nat. Inst. of Technol., Surat, India
Abstract :
The noise-free CMOS inverter is described by a first- order non-linear differential equation that can be regarded as a standard case in electronic circuits from the system-theoretic viewpoint. In lieu of the noise-free CMOS inverter, this paper explains the stochastic CMOS inverter at the low power supply voltage. The method of this paper utilizes the Kolmogorov-Fokker-Planck equation for the noise analysis of the CMOS inverter. In this paper, first we develop the CMOS inverter Itô Stochastic Differential Equation (SDE). Secondly, a system of two-coupled state estimation equations is derived. The numerical experimentations are demonstrated for the noise analysis of the CMOS inverter circuits as well.
Keywords :
CMOS integrated circuits; invertors; low-power electronics; nonlinear differential equations; stochastic processes; CMOS inverter circuit noise analysis; Itô SDE; Itô stochastic differential equation; Kolmogorov-Fokker-Planck equation; electronic circuits; first-order nonlinear differential equation; low-power supply voltage; noise-free CMOS inverter; stochastic CMOS inverter; system-theoretic viewpoint; two-coupled state estimation equations; CMOS integrated circuits; Equations; Inverters; Mathematical model; Noise; Stochastic processes; Trajectory; CMOS inverter; Noise equations; Wiener process; the Kolmogorov-Fokker-Planck equation;
Conference_Titel :
Control Applications (CCA), 2012 IEEE International Conference on
Conference_Location :
Dubrovnik
Print_ISBN :
978-1-4673-4503-3
Electronic_ISBN :
1085-1992
DOI :
10.1109/CCA.2012.6402336