DocumentCode :
587711
Title :
Linearization of RF power amplifiers using an enhanced memory polynomial predistorter
Author :
Tafuri, Felice F. ; Guaragnella, Cataldo ; Fiore, Marco ; Larsen, Torben
Author_Institution :
Dept. of Electron. Syst., Aalborg Univ., Aalborg, Denmark
fYear :
2012
fDate :
12-13 Nov. 2012
Firstpage :
1
Lastpage :
4
Abstract :
Radio frequency power amplifiers (PAs) play a key-role in transceivers for mobile communications and their linearity is a crucial aspect. In order to meet the linearity requirements dictated by the standard at a reasonable efficiency, the usage of a linearization technique is required. In this paper we propose a linearization by means of a new type of digital predistorter, defined directly in the I-Q domain. The architecture of the proposed predistorter can be understood as an enhancement of the memory polynomial model (MPM) by means of additional I-Q terms. The usage of the proposed predistorter allows a more robust linearization of the whole RF transmitter because the enhancement of the model with additional I-Q terms can guarantee a more versatile compensation which is beneficial when the distortion comes from the joint contribution of the PA and the quadrature modulator. The proof of concept is achieved by measurements on a commercial PA in GaN technology and the performance of the proposed predistorter is illustrated.
Keywords :
III-V semiconductors; gallium compounds; microwave power amplifiers; mobile communication; polynomials; radio transceivers; wide band gap semiconductors; GaN; I-Q domain; MPM; RF power amplifier linearization technique; RF transmitter; digital predistorter; enhanced memory polynomial predistorter; mobile communications; quadrature modulator; radiofrequency power amplifiers; Modulation; Predistortion; Q measurement; Radio frequency; Transmitters; digital predistortion; gallium nitride (GaN); linearization; memory effects; memory polynomial; power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
NORCHIP, 2012
Conference_Location :
Cpenhagen
Print_ISBN :
978-1-4673-2221-8
Electronic_ISBN :
978-1-4673-2222-5
Type :
conf
DOI :
10.1109/NORCHP.2012.6403124
Filename :
6403124
Link To Document :
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