Title :
IBIS Simulation Using the Latency Insertion Method (LIM)
Author :
Schutt-Aine, J.E. ; Ping Liu ; Jilin Tan ; Varma, Ambrish
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Abstract :
This paper presents an approach for the transient simulation of I/O buffers described by IBIS models. Using the latency insertion method, a formulation can be obtained for the transient behavior of IBIS models combined with external circuitry. The formulation offers better convergence than traditional Newton-Raphson methods and is therefore more robust. The method also implements the BIRD95 and BIRD98 updates that account for predriver current, simultaneous switching noise, and gate modulation effects. Several computer simulations are performed to validate the method.
Keywords :
Newton-Raphson method; circuit simulation; I/O buffers; IBIS model; IBIS simulation; Newton-Raphson method; computer simulation; gate modulation effect; latency insertion method; simultaneous switching noise; transient behavior; transient simulation; Input/output buffer information specification (IBIS); latency insertion method (LIM); simultaneous switching noise (SSN); transient simulation;
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2013.2258716