THz integrated circuits using InP HEMT transistors

Author

Leong, Kevin ; Mei, G. ; Radisic, Vesna ; Sarkozy, Stephen ; Deal, William

Author_Institution

Northrop Grumman Corp., Baltimore, MD, USA

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

1

Lastpage

4

Abstract

Over the last few years, operating frequencies of InP HEMT Transistors have pushed above 100 GHz (1 THz). This has allowed electronic circuitry to be realized at frequencies as high as 670 GHz. In particular, Low Noise Amplifiers (LNA), Power Amplifiers (PA), mixers and multipliers have all been implemented. A result of this has been integrated circuit receivers and transmitters operating to frequencies as high as 670 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; high electron mobility transistors; indium compounds; mixers (circuits); monolithic integrated circuits; power amplifiers; radiofrequency integrated circuits; terahertz wave devices; InP; InP HEMT transistors; electronic circuitry; frequency 670 GHz; integrated circuit receivers; integrated circuit transmitters; low noise amplifiers; mixers; multipliers; operating frequencies; power amplifiers; terahertz integrated circuits; Gain; HEMTs; Indium phosphide; Noise; Noise figure; Receivers; Low Noise Amplifier; Power Amplifier; Terahertz;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403302

Filename

6403302