Title :
THz integrated circuits using InP HEMT transistors
Author :
Leong, Kevin ; Mei, G. ; Radisic, Vesna ; Sarkozy, Stephen ; Deal, William
Author_Institution :
Northrop Grumman Corp., Baltimore, MD, USA
Abstract :
Over the last few years, operating frequencies of InP HEMT Transistors have pushed above 100 GHz (1 THz). This has allowed electronic circuitry to be realized at frequencies as high as 670 GHz. In particular, Low Noise Amplifiers (LNA), Power Amplifiers (PA), mixers and multipliers have all been implemented. A result of this has been integrated circuit receivers and transmitters operating to frequencies as high as 670 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; high electron mobility transistors; indium compounds; mixers (circuits); monolithic integrated circuits; power amplifiers; radiofrequency integrated circuits; terahertz wave devices; InP; InP HEMT transistors; electronic circuitry; frequency 670 GHz; integrated circuit receivers; integrated circuit transmitters; low noise amplifiers; mixers; multipliers; operating frequencies; power amplifiers; terahertz integrated circuits; Gain; HEMTs; Indium phosphide; Noise; Noise figure; Receivers; Low Noise Amplifier; Power Amplifier; Terahertz;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403302
